Semiconductor devices including stack oxide materials having different densities or different oxide portions, and semiconductor devices including stack dielectric materials having different portions

ABSTRACT

Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/052,123, filed Aug. 1, 2018, now U.S. Pat. No. 11,063,059 issued onJul. 13, 2021, which is a continuation of U.S. patent application Ser.No. 15/013,298, filed Feb. 2, 2016, now U.S. Pat. No. 10,103,160, issuedOct. 16, 2018, which is a divisional of U.S. patent application Ser. No.13/964,282 filed Aug. 12, 2013, now U.S. Pat. No. 9,275,909, issued Mar.1, 2016, the disclosure of each of which is hereby incorporated hereinin its entirety by this reference.

FIELD

The present disclosure, in various embodiments, relates generally tosemiconductor device design and fabrication. More particularly, thepresent disclosure relates to design and fabrication of memory deviceshaving three-dimensionally arranged memory cells.

BACKGROUND

Semiconductor memory devices may be classified into volatile memorydevices and nonvolatile memory devices. In contrast to volatile memorydevices, nonvolatile memory devices, such as flash memory devices,retain stored data even when power is removed. Therefore, nonvolatilememory devices, such as flash memory devices, are widely used in memorycards and in electronic devices. Due to rapidly growing digitalinformation technology, there are demands to continuingly increase thememory density of the flash memory devices while maintaining, if notreducing, the size of the devices.

Three-dimensional (3D)-NAND flash memory devices have been investigatedfor increasing the memory density. The 3D-NAND architecture includes astack of memory cells having a plurality of charge storage structures(e.g., floating gates, charge traps or the like), a stack of alternatingcontrol gates and dielectric materials, and charge blocking materialsdisposed between the charge storage structures (mostly referred to byexample as floating gates hereinafter) and the adjacent control gates.An oxide material, such as silicon oxide, is conventionally used as thedielectric material. The charge blocking material may be an inter-polydielectric (IPD) material, such as oxide-nitride-oxide (ONO) material.

FIG. 1 shows a semiconductor structure 100 that may be further processedto form a 3D-NAND flash memory device. The semiconductor structure 100includes a stack 110 of alternating control gates 108 and dielectricmaterials 105 over a control gate material 103 to be used as controlgate of a select device, such as a select gate source (SGS) or a selectgate drain (SGD), a plurality of floating gates 400, a charge blockingmaterial (411, 412, 413) positioned between the floating gates 400 andadjacent control gates 108, and a channel material 500 extending throughthe stack 110, the control gate material 103, a dielectric material 102,and a portion of a source 101. The source 101 could be formed in and/oron a substrate (not shown), such as a semiconductor substrate comprisingmonocrystalline silicon. Optionally, the semiconductor structure 100 mayinclude an etch stop material 104. Although not depicted here, in otherembodiments, the depicted source 101 may form or be part of a bit line(e.g., instead of a source). The control gates 108 each has a height ofL₁. The floating gates 400 each has a height of L₂. Due to the presenceof the charge blocking material (411, 412, 413) around the discretefloating gate 400, the height L₂ of each discrete floating gate 400 isapproximately half the height L₁ of an adjacent control gate. Forexample, the height of the floating gate in the direction of currentflow (e.g., in a pillar of a string of the memory cells) may beapproximately 15 nm compared to the height of an adjacent control gate,which is approximately 30 nm. In addition, the floating gate is notaligned with the adjacent control gate.

During use and operation, a charge may get trapped on portions of theIPD material, such as on portions of the IPD material that arehorizontally disposed between a floating gate and adjacent dielectricmaterial. When the IPD material is an ONO material, the charge may gettrapped in the horizontal nitride portions of the IPD material that arenot between the control gates and the floating gates. Trapped charge canmigrate along the IPD material, such as through program, erase ortemperature cycling. The presence of the IPD material creates a directpath for programming/erasing into the nitride material of the IPDmaterial and degrades cell program-erase cycling. Such charge trappingor movement can alter the threshold voltage (V_(t)) of the memory cellsor degrade incremental step pulse programming (ISPP) relative to memorycells that do not have such charge trapping in the nitride. Charge trapjeopardizes the controllability of the channel characteristics and thereliability of the 3D-NAND flash memory device.

To minimize charge trap in the horizontal IPD portions, it is desirableto reduce the amount of the horizontal IPD portions, such as byincreasing the height of a floating gate relative to the height of anadjacent control gate. In addition to reducing the undesirable chargetrap, increasing the height of floating gate in the direction of currentflow through the channel may offer a higher degree of channelconductance modulation (e.g., a higher on/off ratio), a reduced cellnoise (e.g., a larger floating gate), and a reliability gain. Theattempts to increase the height of floating gates to about the same asthat of adjacent control gates require the addition of numerousdeposition/dry/wet etch steps, resulting in a complex and rather costlyfabrication process. Furthermore, these additional deposition/dry/wetetch steps often associate with an undesirable increase in the criticaldimension.

Therefore, it would be beneficial to have a fabrication process forforming the floating gates having a height approximately the same as theheight of adjacent control gates that utilizes relatively few additionalacts and without jeopardizing other properties and performances of thefabricated structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a semiconductor structure suitable for processing of a3D-NAND flash memory device;

FIGS. 2-5 are cross-sectional views of various stages in the formationof a semiconductor structure having an oxide material according to anembodiment of the present disclosure;

FIGS. 6A-6D are enlarged cross-sectional views for the removal ofvarious portions of the oxide materials after the formation of controlgate recesses;

FIGS. 7-14 are cross-sectional views of various stages in the formationof a semiconductor structure having an oxide material according to anembodiment of the present disclosure; and

FIGS. 15-18 are cross-sectional views of various stages in the formationof a semiconductor structure according to another embodiment of thepresent disclosure, wherein the alternating dielectric materialcomprises at least two portions of different materials having differentrates of removal when exposed to the same etch chemistry.

DETAILED DESCRIPTION

The following description provides specific details, such as materialtypes, material thicknesses, and processing conditions in order toprovide a thorough description of embodiments of the disclosure.However, a person of ordinary skill in the art will understand thatembodiments of the present disclosure may be practiced without employingthese specific details. Indeed, the embodiments of the presentdisclosure may be practiced in conjunction with conventional fabricationtechniques employed in the industry.

In addition, the description provided herein does not form a completeprocess flow for forming a semiconductor device structure, and thesemiconductor device structures described below do not form a completesemiconductor device. Only those process acts and structures necessaryto understand the embodiments of the present disclosure are described indetail below. Additional acts to form the complete semiconductor devicemay be performed by conventional fabrication techniques. Also thedrawings accompanying the application are for illustrative purposesonly, and are thus not necessarily drawn to scale. Elements commonbetween figures may retain the same numerical designation. Furthermore,while the materials described and illustrated herein may be formed aslayers, the materials are not limited thereto and may be formed in otherthree-dimensional configurations.

As used herein, any relational terms, such as “first,” “second” and“third,” or “top,” “middle” and “bottom,” are used for clarity andconvenience in understanding the present disclosure and accompanyingdrawings and does not connote or depend on any specific preference,orientation or order. It is understood that, although the terms “first,”“second,” “third,” “top,” “middle” and “bottom” are used herein todescribe various elements, these elements should not be limited by theseterms. These terms are only used to distinguish one element fromanother.

As used herein, the terms “horizontal” and “lateral” are defined as aplane parallel to the plane or surface of a wafer or substrate,regardless of the actual orientation of the wafer or substrate. The term“vertical” refers to a direction perpendicular to the horizontal planeas defined above. The term “height” is defined as a dimension of thestructure in a direction perpendicular to the horizontal plane asdefined above.

As used herein, the term “substantially,” in reference to a givenparameter, property or condition, means to a degree that one of ordinaryskill in the art would understand that the given parameter, property, orcondition is met with a small degree of variance, such as withinacceptable manufacturing tolerances.

As used herein, the term “critical dimension” means and includes adimension of a feature within design tolerances in order to achieve thedesired performance of the device and to maintain the performanceconsistency of the device. This dimension may be obtained on a devicestructure as a result of different combinations of fabricationprocesses, which may include, but are not limited to, photolithography,etch (dry/wet), diffusion, or deposition acts.

FIGS. 2-14 are cross-sectional views of various stages of forming aplurality of floating gates for a 3D-NAND flash memory device accordingto one embodiment of the present disclosure.

FIG. 2 shows a semiconductor structure 100 including a source 101, asource oxide material 102, a control gate material 103 to be used as acontrol gate of a select device (e.g., SGS), optionally an etch stopmaterial 104, and a stack 110 of alternating oxide materials 105 andcontrol gates 108 (of memory cells). The oxide material 105 may includemultiple portions having different densities, which are indicated inFIG. 2 by reference numerals 105 a, 105 b, 105 c. While the oxideportions 105 a, 105 b, 105 c are shown in FIG. 2 as distinct, this doesnot necessarily imply that the oxide portions 105 a, 105 b, 105 c areformed from different materials. Rather, the oxide portions 105 a, 105b, 105 c may be formed from the same material, but differing in density.By way of example, the oxide material 105 may include a top oxideportion 105 c, a middle oxide portion 105 b, and a bottom oxide portion105 a, wherein the densities of the top and bottom oxide portions 105 c,105 a are substantially the same as each other but lower than thedensity of the middle oxide portion 105 b. While the oxide material 105is illustrated as including three portions having different densities,the oxide material 105 may include fewer portions or more portions, aswill be described in more detail. The source 101 may be formed fromdoped polysilicon, tungsten silicide (WSi_(x)), or other conventionalmaterials for sources. The etch stop material 104 may be aluminum oxideor other conventional etch stop material selected so that the materialsof the stack 110 may be selectively removed without removing othermaterials of the semiconductor structure 100.

As used herein, the term “substrate” means and includes a base materialor construction upon which additional materials are formed. Thesubstrate may be, for example, a semiconductor substrate, a basesemiconductor material on a supporting structure, a metal electrode or asemiconductor substrate having one or more materials, structures orregions formed thereon. The substrate may be a conventional siliconsubstrate, or other bulk substrate comprising a layer of semiconductivematerial. As used herein, the term “bulk substrate” means and includesnot only silicon wafers, but also silicon-on-insulator (SOI) substrates,such as silicon-on-sapphire (SOS) substrates and silicon-on-glass (SOG)substrates, epitaxial layers of silicon on a base semiconductorfoundation, or other semiconductor or optoelectronic materials, such assilicon-germanium (Si_(1−x)Ge_(x), where x is, for example, a molefraction between 0.2 and 0.8), germanium (Ge), gallium arsenide (GaAs),gallium nitride (GaN), or indium phosphide (InP), among others.Furthermore, when reference is made to a “substrate” in the followingdescription, previous process acts may have been conducted to formmaterials, regions, or junctions in the base semiconductor structure orfoundation. In one embodiment, the substrate is a silicon-containingmaterial, such as a silicon substrate. The substrate may be doped orundoped. In one embodiment, the substrate may be p-doped polysilicon.

As shown in FIG. 2 , the semiconductor structure 100 may include filmsof the respective materials. The source 101, source oxide material 102,control gate material 103, etch stop material 104, and control gatematerials 108 may be formed by conventional techniques, which are notdescribed in detail herein.

The different portions of the oxide material 105 may be formed on theetch stop material 104 by adjusting process conditions during theformation of the material. In one embodiment, the oxide material 105 maybe formed using a plasma enhanced-chemical vapor deposition (PECVD)process. Each portion may be formed to a desired thickness beforeforming another portion. The oxide portions 105 a, 105 b, 105 c may beof sufficiently different densities that the portions may be selectivelyremoved when subjected to a suitable etch chemistry. The density(measured in g/cm³ unit) of each oxide portion may be determined usingX-ray reflectometry (XRR), which is a conventional technique and,therefore, is not described in detail herein. In some embodiments, adensity of one oxide portion may be from about six times (6×) lower toabout two times (2×) higher than the density of an adjacent oxideportion(s), i.e., an oxide portion may be from about six times lessdense to about two times more dense in relation to the adjacent oxideportion(s). However, it is understood that the differences in densitiesof oxide portions may be varied, depending on specific integrationschemes of the semiconductor structure.

Various process parameters may be adjusted while forming the oxidematerial 105 that includes oxide portions of different densities.Non-limiting examples of such processing parameters include an amount ofRF power/energy applied and RF frequency during a deposition process. Byway of non-limiting example, the density of each of the oxide portionsmay be tailored by varying the frequency and power applied during theformation of the oxide portion. A high frequency (HF) may be an RFfrequency of from about 1 MHz to about 300 MHz, and a low frequency (LF)may be an RF frequency of from about 30 KHz to about 1 MHz. A highfrequency (HF) power may be an RF power of about 10 Watts to about 1000Watts, and a low frequency (LF) power may be an RF power of from about10 Watts to about 500 Watts. In some embodiments, the high frequency(HF) may be an RF frequency of about 13.56 MHz. In some embodiments, thelow frequency (LF) may be an RF frequency of about 350 KHz.

If an oxide portion is formed using high power/low frequency, moresurface impingement of ions may occur and consequently a high density ofthe oxide portion may be produced. Conversely, if low power/lowfrequency is used, less surface impingement of ions may occur andconsequently a relatively lower density portion of the oxide materialmay be produced.

Additional processing parameters that may be adjusted include, but arenot limited to, deposition time, types and ratios of component gases,pressure, flow rates of the component gases, temperature, orpost-deposition treatment, etc. While these processing parameters mayhave a smaller effect on the density of the oxide material compared toadjusting at least one of the RF power and frequency, the density of theoxide material may be further tailored by adjusting one or more of theseparameters. For instance, a longer deposition time may produce the oxideportion having a higher density compared to a shorter deposition time.Several processing parameters may be controlled to obtain the oxidematerial that includes at least two oxide portions of differentdensities. In some embodiments, the processing parameters may beprogrammed such that the desired density of oxide material is achieved.

The density of deposited oxide material may, optionally, be modified bypost-deposition treatment. By way of non-limiting example, thepost-deposition treatment may include subjecting the oxide material 105to a mixed frequency of high frequency (HF) and low frequency (LF)plasma treatment. The mixed frequency plasma treatment may densify thetop oxide portion 105 c. The desired depth of densification of the oxidematerial 105 may be dependent on several factors including, but notlimited to, the RF power employed during the post-deposition treatment,the duration of the post-deposition treatment, or both.

In some embodiments, the oxide material having at least two oxideportions of different densities may be achieved by adjusting the RFpower during the deposition and applying a post-deposition treatmentusing a mixed frequency plasma treatment. In some embodiments, the oxidematerial having at least two oxide portions of different densities maybe obtained by forming the oxide material at an RF power from about 60Watts to about 130 Watts, and applying a postdeposition treatment fromabout two seconds to about 120 seconds using a mixed frequency plasmatreatment having a high frequency/lower frequency power (HF/LF)combination from about 350/0 Watts to 1200/100 Watts.

In some embodiments, the oxide material having at least two oxideportions of different densities may be achieved by depositing the oxidematerial using high frequency (HF), and then subjecting the oxidematerial to a high frequency (HF) plasma treatment. In some embodiments,this may be achieved by depositing the oxide material using highfrequency (HF), and then subjecting the oxide material to a mixedfrequency of high frequency (HF) and low frequency (LF) plasmatreatment. In some embodiments, this may be achieved by depositing theoxide material using a mixed frequency of high frequency (HF) and lowfrequency (LF), and then subjecting the oxide material to a highfrequency (HF) plasma treatment. In some embodiments, this may beachieved by depositing the oxide material using a mixed frequency ofhigh frequency (HF) and low frequency (LF), and then subjecting theoxide material to a mixed frequency of high frequency (HF) and lowfrequency (LF) plasma treatment.

In some embodiments, the oxide material may be deposited usingtetraethyl orthosilicate (TEOS) and oxygen. In some embodiments, theoxide material may be deposited using silane and oxygen. In oneembodiment, the oxide material may be silicon oxide.

In some embodiments, the formation of oxide material having at least twooxide portions of different densities may be conducted in one reactionchamber. In these in-situ deposition embodiments, the processingparameters may be adjusted to form one oxide portion and then adjustedfor the formation of another oxide portion having a different density.

Alternatively, in some embodiments the formation of oxide materialhaving at least two oxide portions of different densities may beconducted in more than one reaction chamber. By way of non-limitingexample, one oxide portion of the oxide material may be formed in afirst reaction chamber, and then another oxide portion of differentdensity may be formed in a second reaction chamber.

The control gate material 108 may be formed over the oxide material 105by any conventional method and, therefore, is not described in detailherein. The control gate material may be of any known conductivematerials. Non-limiting examples of such conductive materials mayinclude n-doped polysilicon, p-doped polysilicon, or undopedpolysilicon. In one embodiment, the control gate material may be n-dopedpolysilicon. The formation of the oxide materials 105 and control gatematerials 108 may be repeated to create the stack 110 of alternatingoxide materials 105 and control gates 108.

Referring to FIG. 3 , the semiconductor structure 100 of FIG. 2 issubjected to a single etch process or multiple etch processes to createan opening 200 through the stack 110 of alternating oxide materials 105and control gate materials 108 that stops in the etch stop material 104.By way of example, the stack 110 may be etched using an anisotropic dryetch process. A surface of the control gate material 103 may be exposedfollowing the etch process. The opening 200 may be formed using anyconventional etch chemistry (i.e., a reactive ion etch), and thereforeis not described in detail herein. Although the semiconductor structure100 of FIG. 3 shows only one opening 200, it is understood that thesemiconductor structure 100 may include more than one opening.

As shown in FIG. 4 , a portion of the control gate materials 108 in thestack 110 may be selectively removed relative to adjacent oxidematerials 105 to create control gate recesses 301 having a height of L₁,where the upper and lower boundaries of the control gate recesses 301are defined by sidewalls of the adjacent oxide materials 105. The heightL₁ of the control gate recesses 301 may be substantially the same as thethickness of the adjacent control gate materials 108. The control gaterecesses 301 may be formed by laterally removing portions of the controlgate materials 108. In some embodiments, the control gate recesses 301may be formed by wet etching the semiconductor structure 100 using asolution of tetramethylammonium hydroxide (TMAH).

As shown in FIG. 5 , a portion of the oxide materials 105 in the stack110 may be removed to increase the height of the control gate recesses301. Portions of the oxide materials 105 adjacent to the control gaterecesses 301 may be removed using any conventional wet etch chemistryfor an oxide material. In some embodiments, the portions of the oxidematerials may be removed by etching with an etchant selected from thegroup consisting of hydrogen fluoride (HF) solution, and buffered oxideetch (BOE) solution comprising HF and NH₄F. Since the oxide material 105has oxide portions of different densities, the oxide portions may beremoved at different rates when exposed to an etch chemistry. By way ofexample, a portion of the top and bottom oxide portions 105 c, 105 a maybe removed without removing a portion of the middle oxide portion 105 b.The top and bottom oxide portions 105 c, 105 a above and below thecontrol gate recesses 301 may be removed by the etch chemistry, whileportions of the top and bottom oxide portions 105 c, 105 a above andbelow the control gate materials 108 may remain.

As shown in FIG. 5 , the top and bottom oxide portions 105 c, 105 a maybe removed such that the resulting control gate recesses 302 have aheight of L₂, which is greater than the original height L₁ of thecontrol gate recesses 301. The amount of oxide material 105 removed, theheight L₂ of the control gate recesses 302, and the profile of thecontrol gate recesses 302 may be controlled by various factorsincluding, but not limited to, the densities of each oxide portion ofthe oxide material 105, the thickness of each oxide portion in the oxidematerial 105, or the etching types and conditions. The heights andprofiles of the control gate recesses 302 may be dependent on thedensities of each oxide portion in the oxide material 105, as shown anddiscussed in more detail with reference to FIGS. 6A-6D.

FIGS. 6A-6D are enlarged views of the area labeled “W” in FIG. 5 . InFIG. 6A, the oxide material 105 includes the top oxide portion 105 c,the middle oxide portion 105 b, and the bottom oxide portion 105 a,wherein the densities of the top and bottom oxide portions 105 c, 105 aare substantially the same, and the density of the middle oxide portion105 b is higher than that of the top and bottom oxide portions 105 c,105 a. The top oxide portion 105 c of one oxide material 105 and thebottom oxide portion 105 a of another oxide material 105 define theboundaries of each control gate recess 301. Since the top and bottomoxide portions 105 c, 105 a adjacent the control gate recess 301 haveabout the same density, portions of these materials are removed atsubstantially the same rate while other exposed materials, includingmiddle oxide portion 105 b, are removed at a substantially slower rate.Therefore, the amounts of removal in the vertical direction for the topand bottom oxide portions 105 c, 105 a are substantially the same.However, portions of the top and bottom oxide portions 105 c, 105 aoverlying or underlying the control gate material 108 may remain inplace, in addition to middle oxide portion 105 b. While portions of theoxide material 105 may also be removed in the horizontal direction,which leads to a loss in critical dimension (CD), the loss in CD may becompensated for by appropriately selecting the initial CD of the opening200. Thus, horizontal etching of the oxide material 105 of the structurein FIG. 6A may occur with less effect on the CD than the horizontaletching of the oxide material 105 of the structure in FIG. 6B. It isdesirable to minimize the loss of critical dimension to comply withdesign rules/requirements and, therefore, ensure that the desired deviceperformance is achieved.

Therefore, the dimension, height and profile of the control gate recess302 may be controlled by appropriate selection of the type and densityof oxide portions (e.g., 105 a, 105 b, 105 c) in the oxide material 105,the thickness of each oxide portion, the etching conditions, and othervarious known factors.

While FIGS. 2-5 have been described and illustrated above as includingbottom oxide portion 105 a, middle oxide portion 105 b, and top oxideportion 105 c, where the top and bottom oxide portions 105 c and 105 ahave lower densities than the middle oxide portion 105 b, otherconfigurations and other relative densities of the oxide portions may beused depending on the intended use of the semiconductor structure 100.In other embodiments and as explained in more detail below, the oxidematerial 105 may include a single oxide portion or two oxide portionshaving different densities.

FIG. 6B, the oxide material 105 includes a substantially uniform oxidematerial with substantially the same density across the height of theoxide material 105, which provides the semiconductor structure 100 ofFIG. 1 after further processing steps. During the wet etch process ofFIG. 5 , a portion of the oxide material 105 may be removed in ahorizontal direction (shown as arrow “H”) and in a vertical direction(shown as arrow “V”) such that the height L₂ of the control gate recess302 is greater than the height L₁. As the oxide material 105 in thestack 110 is made of an oxide material having a single density, theamount of removal in the vertical and horizontal directions issubstantially the same.

In FIG. 6C, the oxide material 105 includes an oxide portion 105 a overan oxide portion 105 d, wherein the oxide portion 105 a has a lowerdensity than the oxide portion 105 d. The oxide portion 105 d of theoxide material 105 is in direct contact to the upper boundary of theadjacent control gate 108, while the oxide portion 105 a is in directcontact to the lower boundary of the adjacent control gate 108. Sincethe oxide portion 105 a has a lower density than the oxide portion 105d, the oxide portion 105 a may be removed at a faster rate than theoxide portion 105 d when exposed to the same etch chemistry. Thus, theamount of etching in the vertical direction for the oxide portions 105a, 105 d adjacent the control gate recesses 302 are not the same whenexposed to the same etch chemistry. As shown, the etching of the oxideportion 105 a in the vertical direction is faster than the etching ofthe oxide portion 105 d in the vertical direction due to the differentdensities of the oxide portion 105 a, 105 d.

In FIG. 6D, the oxide material 105 includes an oxide portion 105 d overan oxide portion 105 a, wherein the oxide portion 105 a has a lowerdensity than the oxide portion 105 d. The oxide portion 105 a of theoxide material 105 is in direct contact to the upper boundary of theadjacent control gate 108, while the oxide portion 105 d is in directcontact to the lower boundary of adjacent control gate 108. Since theoxide portion 105 a has a lower density than the oxide portion 105 d,the oxide portion 105 a is removed at a faster rate than the oxideportion 105 d when exposed to the same etch chemistry. Thus, the amountof etching in the vertical direction for the oxide portions 105 a, 105 dadjacent the control gate recesses 302 are not the same when exposed tothe same etch chemistry. As shown, the etching of the oxide portion 105a in the vertical direction is faster than the etching of the oxideportion 105 d in the vertical direction due to the different densitiesof the oxide portions 105 a, 105 d.

In some embodiments, the oxide material 105 may include the top oxideportion 105 c, the middle oxide portion 105 b and the bottom oxideportion 105 a, wherein the densities of the top and bottom oxideportions 105 c, 105 a are substantially the same, and the densities ofthe top and bottom oxide portions 105 c, 105 a are up to about six timeslower (i.e., 6× less dense) than the density of the middle oxide portion105 b.

In some embodiments, the oxide material 105 may include a top oxideportion 105 c, middle oxide portion 105 b and bottom oxide portion 105a, wherein the density of the top oxide portion 105 c is from about sixtimes lower (i.e., 6× less dense) to about two times higher (i.e., 2×more dense) than the density of the middle oxide portion 105 b, and thedensity of the bottom oxide portion 105 a is from about six times lower(i.e., 6× less dense) to about two times higher (i.e., 2× more dense)than the density of the middle oxide portion 105 b. The densities of thetop oxide portion 105 c and the bottom oxide portion 105 a may or maynot be the same as each other.

Referring now to FIGS. 7-9 , the charge blocking material, such asinter-poly dielectric (IPD) material, may be formed on the exposedsurface of the control gate recesses 302 and the sidewalls and floor ofthe opening 200 of the semiconductor structure 100 to provide thesemiconductor structure of FIG. 9 . In one embodiment of the presentdisclosure, the charge blocking material is an inter-poly dielectric(IPD) material that includes dielectric materials 411, 412 and 413. Inone embodiment, the charge blocking material is an inter-poly dielectric(IPD) material consists of oxide 411-nitride 412-oxide 413 (ONO)materials.

In FIG. 7 , a first dielectric material 411, such as an oxide material,may be selectively formed on the sidewalls of the control gate material108. By way of non-limiting examples, the first dielectric material 411may include silicon oxide, silicon nitride, silicon oxynitride, or otherhigh-k insulating materials.

In some embodiments, the first dielectric material 411 may be siliconoxide. Any conventional method for forming a dielectric material may beused. By way of non-limiting example, the dielectric material may beformed by chemical vapor deposition (CVD), atomic layer deposition(ALD), physical vapor deposition (PVD), or combinations thereof. Toselectively form the first dielectric material 411, the first dielectricmaterial 411 may be grown on the control gate material 108. In oneembodiment, the first dielectric material 411 may be grown on theexposed surface of control gate material 108 through an In Situ SteamGeneration (ISSG) process, physical vapor deposition (PVD), furnacegrowth (diffusion), or combinations thereof.

In FIG. 8 , a second dielectric material 412 such as a nitride materialis formed substantially conformally on the exposed surfaces of the oxidematerial 105, the first dielectric material 411 in the control gaterecesses 302, the etch stop material 104 and the exposed surface of thecontrol gate material 103. In some embodiments, the second dielectricmaterial 412 is silicon nitride. Any conventional method for forming thenitride material may be used and, therefore, is not described in detailherein.

A third dielectric material 413 may be formed substantially conformallyover the second dielectric material 412, providing the semiconductorstructure 100 of FIG. 9 . Any conventional method for forming the thirddielectric material 413 may be used, such as chemical vapor deposition(CVD), atomic layer deposition (ALD), physical vapor deposition (PVD),or combinations thereof. The third dielectric material 413 may includesilicon oxide, silicon nitride, silicon oxynitride, or other high-kinsulating materials. In some embodiments, the third dielectric material413 is silicon oxide. The first and third dielectric materials 411, 413may be independently selected so that the same or different oxidematerials are used. Depending on the materials selected, the inter-polydielectric (IPD) material may include an oxide-nitride-oxide (ONO)material of the first dielectric oxide material 411—the seconddielectric nitride material 412—the first dielectric oxide material 413on at least the area proximate the control gate recesses 303 on thesidewalls of the opening 200. The IPD material (411, 412, 413) mayoccupy the area in the control gate recesses 303 such that the height L₃of the resulting control gate recesses is substantially equal to theheight L₁ of the adjacent control gate material 108.

Referring to FIG. 10 , floating gate material 400 may be formed in thecontrol gate recesses 303 adjacent to the third dielectric material 413to substantially fill the remaining volume of the control gate recesses303. The floating gate material 400 may be separated from the adjacentcontrol gate material 108 by the IPD material (411, 412, 413). Thus, thesemiconductor structure 100 includes floating gates 400 that arediscrete and isolated from one another and from the control gates 108 byIPD material (411, 412, 413). By way of non-limiting example, thefloating gate material 400 may include silicon, germanium, or silicongermanium. In one embodiment, the floating gate material 400 ispolysilicon, such as n-doped polysilicon, p-doped polysilicon, orundoped polysilicon. The control gate material 108 and the floating gatematerial 400 may be independently selected so that the same or differentmaterials are used. In one embodiment, the control gate material 108 andthe floating gate material 400 are polysilicon. Any conventional methodfor forming the floating gate material 400 may be used and, therefore,is not described in detail herein.

After substantially filling the control gate recesses 303, any excessfloating gate material 400 may be removed using vapor ammonia, a mixtureof ammonium fluoride and nitric acid (NH₄F/HNO₃), an ozone orhydrofluoric acid (HF) mix or cycle, a mixture of hydrofluoric acid andnitric acid (HF/HNO₃), or a tetramethylammonium hydroxide (TMAH)process. The process used to remove any excess floating gate material400 may be a function of the doping of the floating gate material 400.For example, if the floating gate material 400 is an n-dopedpolysilicon, the TMAH process may be used to remove the excess floatinggate material 400. A vertical, exposed surface of the floating gatematerial 400 may be substantially coplanar with a vertical, exposedsurface of the third dielectric material 413. As shown in FIG. 10 , theheight L₃ of floating gate 400 may be substantially the same as theheight L₁ of control gate material 108.

Referring to FIG. 11 , the depth of the opening 200 may then beincreased such that the opening 200 extends through the control gatematerial 103 and into at least a portion of the source oxide material102. The depth of the opening 200 may be increased by etching thecontrol gate material 103 and the source oxide material 102 byconventional techniques, which are not described in detail herein.

In some embodiments as shown in FIG. 12 , a tunnel dielectric material511 (hereinafter sometimes referred to as “tunnel oxide material” byexample) may be formed on the exposed surfaces of the floating gates 400and the control gate material 103. In some embodiments, the tunnel oxidematerial 511 may be silicon oxide. Any conventional method for forming atunnel oxide material may be used. To selectively form the tunneldielectric material 511, the tunnel oxide material 511 may be grown onthe exposed surfaces of the floating gates 400 and the control gatematerial 103.

In some embodiments, a liner material, such as a polysilicon liner, maybe formed on the exposed surface of the opening 200, such as on thesidewalls of the opening 200. For example, as shown in FIG. 12 , a linermaterial 512 may be formed on the exposed surfaces of the thirddielectric material 413 and the tunnel oxide material 511, and theexposed sidewalls of source oxide material 102. The liner material 512may protect oxide materials from downstream process acts.

Referring to FIG. 13 , the depth of the opening 200 may be extendedthrough the source oxide material 102 to allow electrical contact to thesource 101. As shown in the embodiment of FIG. 13 , the remainingthickness of the source oxide material 102 and at least a portion of thesource 101 may be removed such that the opening 200 extends through thestack 110, the etch stop material 104, the control gate material 103,the source oxide material 102 and at least a portion of the source 101.Any conventional method for removing the source oxide material 102 andat least a portion of the source 101 may be used and, therefore, is notdescribed in detail herein.

In FIG. 14 , a channel material 500 may be formed to substantially fillthe opening 200 of the semiconductor structure 100. By way ofnon-limiting example, the channel material 500 may be conductively dopedpolysilicon. Any conventional method for forming the channel material500 may be used and, therefore, is not described in detail herein.

In some embodiments, the semiconductor structure 100 of FIG. 13 may besubjected to a cleaning process prior to substantially filling theopening 200 with the channel material 500. Any conventional method forcleaning process may be used and, therefore, is not described in detailherein.

As described herein, one or more embodiments of the present disclosuremay enable an increased height of a floating gate to be formed, withoutjeopardizing the critical dimensions and without the addition of complexacts to the process. By modifying the process to form the floating gatesand control gates at the same height, the floating gates and controlgates may be aligned.

Although various embodiments herein have described using an oxidematerial having portions of different densities as a dielectricmaterial, it is understood that other dielectric materials may be used.The dielectric material may be any insulative material that can beformed by a PECVD process in which processing parameters, such as powerand frequency, are adjustable and result in portions of the insulativematerial having different densities. By way of non-limiting examples,the dielectric material may be silicon oxide, silicon nitride, siliconoxynitride, or other high-k insulating material.

A semiconductor structure may include a stack of alternating oxidematerials and control gates, each of the oxide materials comprising atleast two oxide portions of different densities; charge storagestructures (e.g., floating gates or charge traps) laterally adjacent tothe control gates; a charge block material between each of the chargestorage structures and the laterally adjacent control gates; and apillar extending through the stack of alternating oxide materials andcontrol gates.

A semiconductor structure may include a stack of alternating dielectricmaterials and control gates, the dielectric material comprising a topportion, a middle portion and a bottom portion, the top and bottomportions having lower densities than the middle portion; a chargestorage structure having a height substantially the same as the heightof an adjacent control gate; a charge block material between the chargestorage structure and the adjacent control gate; and a channel materialextending through the stack of alternating oxide materials and controlgates.

FIGS. 15-18 are cross-sectional views of some stages of forming aplurality of floating gates for a 3D-NAND flash memory device accordingto one embodiment of the present disclosure, wherein the alternatingdielectric materials of the stack may include at least two portions ofdifferent materials having different rates of removal when exposed to asingle etch chemistry (i.e., the same etch chemistry). The differentmaterials in the alternating dielectric materials may have substantiallythe same density or different densities.

FIG. 15 shows a semiconductor structure 100′ including a source 101′, asource oxide material 102′, a material 103′ to be used as a control gateof a select device (e.g., SGS), optionally an etch stop material 104′, astack 110′ of alternating dielectric materials 105′ and control gates108′ (of memory cells), and an opening 200′ extending through the stack110′. The dielectric material 105′ may include at least two portions ofdifferent materials having different rates of removal when exposed tothe same etch chemistry. The different materials in the dielectricmaterial may or may not have same density. Non-limiting examples of thematerials suitable for the different portions of the alternatingdielectric material may include an oxide-based material, a nitride-basedmaterial, an oxynitride-based material, or combinations thereof.

In some embodiments, each of the dielectric materials of the stack mayinclude at least a first material portion and a second material portion,wherein the first material portion has an etch rate at least about twotimes greater than that of the second material portion when exposed tosame etch chemistry. However, it is understood that the differences inremoval rates of dielectric material portions may be varied, dependingon specific integration schemes of the semiconductor structure.

By way of non-limiting example, as shown in FIG. 15 , the dielectricmaterial 105′ may include a top material portion 105 c′, a middlematerial portion 105 b′, and a bottom material portion 105 a′, whereinwhen exposed to the same etch chemistry, the top material portion 105 c′has substantially the same rate of removal as the bottom materialportion 105 a′ and a higher rate of removal than that of the middlematerial portion 105 b′. As a non-limiting example, the top and bottommaterial portions (105 c′ and 105 a′) of the dielectric material 105′may include silicon oxide (SiO_(x)) material, and the middle materialportion 105 b′ may include silicon nitride (SiN_(y)) material. Asanother non-limiting example, the top and bottom material portions (105c′ and 105 a′) of the dielectric material 105′ may include silicon oxide(SiO_(x)) material and the middle material portion 105 b′ may includesilicon oxynitride (SiO_(x)N_(y)) material.

Although the semiconductor structure 100′ of FIG. 15 shows only oneopening 200′, it is understood that the semiconductor structure 100′ mayinclude more than one opening. Furthermore, while the dielectricmaterial 105′ is illustrated in FIG. 15 as including three portions, itis understood that the dielectric material 105′ may include fewer thanthree material portions or more than three material portions.

As shown in FIG. 16 , portions of the control gate materials 108′ andportions of the dielectric materials 105′ in the stack 110′ may beremoved to create control gate recesses 302′, where the upper and lowerboundaries of the control gate recesses 302′ are defined by sidewalls ofthe adjacent dielectric materials 105′. By way of non-limiting example,as shown in FIG. 16 , the top and bottom material portions (105 c′, 105a′) of the dielectric materials 105′ may be removed withoutsubstantially removing a portion of the middle material portion 105 b′to provide such that the control gate recesses 302′ having a height ofL₂, which is greater than the height L₁ of the adjacent control gate108′. As a non-limiting example, when the top and bottom materialportions (105 c′ and 105 a′) of the dielectric material 105′ arecomposed of silicon oxide (SiO_(x)) material and the middle materialportion 105 b′ is composed of silicon nitride (SiN_(y)) material, thesilicon oxide (SiO_(x)) material of the top and bottom material portions(105 c′ and 105 a′) may be removed at a faster rate than the siliconnitride (SiN_(y)) material of the middle material portion 105 b′ byetching with an etchant selected from the group consisting of hydrogenfluoride (HF) solution, and buffered oxide etch (BOE) solutioncomprising HF and NH₄F.

Therefore, the dimension, height and profile of the control gate recess302′ may be controlled by appropriate selection of materials for each ofthe dielectric portions (e.g., 105 a′, 105 b′, 105 c′) in the dielectricmaterial 105′, the thickness of each material portion, the etchingconditions, and other various known factors.

Referring to FIG. 17 , a charge blocking trap structure(411′-412′-413′), such as inter-poly dielectric (IPD) material, may beformed on the exposed surface of the control gate recesses 302′ tooccupy the area in the control gate recesses 302′ such that the heightL₃ of the resulting control gate recesses is substantially equal to theheight L₁ of the adjacent control gate material 108′. The floating gatematerial 400′ may then be formed in the control gate recesses tosubstantially fill the remaining volume of the control gate recesses.

In some embodiments as shown in FIG. 18 , a tunnel dielectric material511′ may be formed on the exposed surfaces of the floating gates 400′and the control gate material 103′. A liner material 512′ may be formedon the exposed surface of the opening 200′, and a channel material 500′may be formed to substantially fill the opening 200′.

A semiconductor structure may include a stack of alternating dielectricmaterials and control gates, charge storage structures laterallyadjacent to the control gates and having substantially the same heightas the respective laterally adjacent control gate, a charge blockmaterial between each of the charge storage structures and therespective laterally adjacent control gate, and a pillar extendingthrough the stack of alternating dielectric materials and control gates,wherein each of the dielectric materials of the stack comprises at leasttwo portions of different materials having different rates of removalwhen exposed to the same etch chemistry.

The semiconductor structure (100 of FIG. 14, 100 ′ of FIG. 18 ) may besubjected to further processing for production of a semiconductordevice. In one embodiment, the semiconductor structure (100, 100′) maybe further processed by conventional techniques to form a semiconductordevice, such as a 3D-NAND flash memory device. However, while theembodiments are described in connection with 3D-NAND flash memorydevices, the disclosure is not so limited. The disclosure is applicableto other semiconductor structures and memory devices which may employcharge storage structures.

FIGS. 2-18 illustrate some embodiments of forming a semiconductorstructure (100, 100′) having charge storage structures (400, 400′) for a3D-NAND device, and do not necessarily limit the number of alternatingoxide materials (105, 105′) and control gate materials (108, 108′) inthe stack (110, 110′). In addition, the locations, numbers, and shapesof the charge storage structures (400, 400′), or the profile and shapeof the channel material (500, 500′) are not limited to the illustratedembodiments.

A method of forming a semiconductor structure can include utilizing anoxide material having at least two oxide portions of differentdensities, in combination with an optimized wet etching process for suchoxide material to increase the height of charge storage structuresformed between the oxide materials, to sculpt the profile of chargestorage structures to the predetermined structure, or both.

One such method modifies the deposition process of oxide material andadds a wet etching step of the oxide material prior to formation ofcharge blocking material in the control gate recesses. Such a method mayallow for an increased height of a charge storage structure withoutjeopardizing the critical dimensions and without complex additionalsteps.

While the present disclosure is susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, the present disclosure is not intended to be limited to theparticular forms disclosed. Rather, the present disclosure is to coverall modifications, equivalents, and alternatives falling within thescope of the present disclosure as defined by the following appendedclaims and their legal equivalents.

What is claimed is:
 1. A semiconductor device, comprising: a stack ofalternating oxide materials and conductive materials, one or more of theoxide materials of the stack comprising at least two portions ofdifferent densities; discrete charge storage structures laterallyadjacent to the conductive materials of the stack, the discrete chargestorage structures comprising a uniform height across a length thereofand no portion of the conductive materials of the stack overlying orunderlying the discrete charge storage structures, wherein a width of aportion of the at least two portions proximal to the conductivematerials is less than a width of another portion of the at least twoportions distal to the conductive materials; a charge block materialbetween the discrete charge storage structures and the respectivelaterally adjacent conductive materials of the stack; and a pillarextending through the stack of alternating oxide materials andconductive materials.
 2. The semiconductor device of claim 1, wherein aheight of the discrete charge storage structures is substantially equalto a height of the respective laterally adjacent conductive materials ofthe stack.
 3. The semiconductor device of claim 1, wherein a height ofthe charge block material is greater than a height of the respectivelaterally adjacent conductive materials of the stack.
 4. Thesemiconductor device of claim 1, wherein the oxide materials of thestack comprise three portions of different densities, one of the threeportions formulated to be selectively removable relative to the otherportions.
 5. The semiconductor device of claim 1, wherein the pillarcomprises a channel material through the stack of alternating oxidematerials and conductive materials.
 6. The semiconductor device of claim5, wherein the channel material comprises polysilicon.
 7. Asemiconductor device, comprising: a stack of alternating oxide materialsand conductive materials, one or more of the oxide materials of thestack comprising at least two different oxide portions directlyvertically adjacent to one another; charge storage structures laterallyadjacent to the conductive materials of the stack, the charge storagestructures comprising a uniform height across a length thereof and noportion of the conductive materials of the stack overlying or underlyingthe charge storage structures; a charge block material between thecharge storage structures and the respective laterally adjacentconductive materials of the stack, portions of the charge block materialextending beyond upper boundaries and lower boundaries of the conductivematerials of the stack along an entirety of the length of the chargestorage structures; and a channel material extending through the stackof alternating oxide materials and conductive materials.
 8. Thesemiconductor device of claim 7, wherein the oxide materials of thestack comprise at least three different oxide portions.
 9. Thesemiconductor device of claim 7, wherein the at least two differentoxide portions are formulated to exhibit different densities relative toone another.
 10. The semiconductor device of claim 7, wherein the atleast two different oxide portions exhibit different thicknesses. 11.The semiconductor device of claim 7, wherein the charge block materialcomprises a first oxide material on sidewalls of the conductivematerials of the stack, a nitride material on sidewalls of the firstoxide material, and a second oxide material on sidewalls of the nitridematerial.
 12. A semiconductor device, comprising: a stack of alternatingdielectric materials and conductive materials, the dielectric materialsof the stack comprising at least two different portions abutting oneanother along horizontal interfaces therebetween; charge storagestructures laterally adjacent to the conductive materials of the stack,the charge storage structures comprising a uniform height across alength thereof and the height of the charge storage structures the sameas the height of the laterally adjacent conductive materials of thestack; a charge block material between the charge storage structures andthe respective laterally adjacent conductive materials of the stack, aportion of the charge block material extending within recessed regionsof the dielectric materials of the stack; and a channel materialvertically extending through the stack of alternating dielectricmaterials and conductive materials, sidewalls of the channel materialexhibiting a slope.
 13. The semiconductor device of claim 12, whereinthe at least two different portions of the dielectric materials areformulated to be selectively removable relative to one another.
 14. Thesemiconductor device of claim 12, wherein the at least two differentportions of the dielectric materials of the stack are formulated toexhibit different densities relative to one another.
 15. Thesemiconductor device of claim 12, wherein the at least two differentportions of the dielectric materials of the stack comprise differentdielectric materials.
 16. The semiconductor device of claim 12, whereinthe at least two different portions of the dielectric materials of thestack comprise the same dielectric material and different densities. 17.The semiconductor device of claim 12, wherein the dielectric materialsof the stack comprise oxide materials.
 18. The semiconductor device ofclaim 12, wherein the dielectric materials of the stack comprise siliconoxide, silicon nitride, or silicon oxynitride.